在考虑硅原子团簇的尺寸对其俘获半径的影响的基础上提出了一个改进的模型 ,来描述团簇的退火行为 ,并给出了点缺陷的表面复合速率的表达式 .为了验证此模型 ,给出了动力学蒙特卡洛方法的模拟结果 ,模拟结果与实验结果相吻合 .通过表面复合速率的模拟结果和模型的对比 ,模型得到了验证 .分析表明团簇尺寸对其退火行为有明显的影响 An improved model is proposed based on the influence of the size of silicon atom clusters on its capture radius. The annealing behavior of the clusters is described and the expression of surface recombination rate of point defects is given. To verify this model, The simulation results of kinetic Monte Carlo method are given, and the simulation results are in good agreement with the experimental results. The model is validated by the simulation results of the surface recombination rate and the model. The analysis shows that the cluster size has obvious effect on the annealing behavior influences