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采用反应离子刻蚀GaAs/GaAlAs双异质结构激光器的一个腔面,已经获得室温下连续激射的效果,其阈电流比解理腔面高18％左右,量子效率低14％左右.
The reactive ion etching GaAs / GaAlAs double heterostructure laser cavity surface, has been obtained at room temperature continuous lasing effect, the threshold current is about 18% higher than the cleavage cavity surface, the quantum efficiency of about 14% lower.