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研究了用电子辐照减小硅外延平面大电流开关二极管反向恢复时间的工艺。将未封帽的硅外延平面大电流开关二极管2CK 29的阳极面用能量1.2MeV、注量为3～5×10~(14)e/cm~2的电子束照射,可以使2 CK 29的反向恢复时间减至原来的1/4～1/8,而正向压降维持在正常范围之内。辐照器件具有良好的性能。
The technology of reducing the reverse recovery time of silicon high current switching diode by electron irradiation was studied. The unsealed silicon epitaxial planar high current switching diode 2CK 29 anode surface with energy 1.2MeV, the injection of 3 ~ 5 × 10 ~ (14) e / cm ~ 2 electron beam irradiation, you can 2 CK 29 Reverse recovery time reduced to the original 1/4 ~ 1/8, while the positive pressure drop remained within the normal range. Irradiation device has good performance.