The principle, imaging condition and experimental method for obtaining high resolution composition contrast in secondary electron image were described. A new technique of specimen preparation for secondary electron composition contrast observation was introduced and discussed. By using multilayer P+-Si1-xGex/p-Si heterojunction internal photoemission infrared detector as an example, the applications of secondary electron composition contrast imaging in microstructure studies on heterojunction semiconducting materials and devices were stated. The characteristics of the image were compared with the ordinary transmission electron diffraction contrast image. The prospects of applications of the imaging method in heterojunction semiconductor devices and multilayer materials are also discussed.