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研究了PVT法生长SiC过程中的传热行为 ,以优化生长条件、获得高质量单晶。该研究是针对坩埚盖 (籽晶粘附于坩埚盖上 )和炉盖之间的传热行为进行的。研究认为 ,坩埚盖上部石墨毡开孔形状和大小对坩埚盖的径向温度场有很大影响。采用本文简化的模型可以估算坩埚在不同位置下、不同的石墨毡开孔形状和大小时坩埚盖和炉盖之间总的辐射热阻和传热量。对影响坩埚盖和炉盖之间传热的因素进行了讨论。另外 ,讨论了在生长过程中动态调整坩埚盖散热条件的可行性。
The heat transfer behavior of SiC grown by PVT method was studied in order to optimize the growth conditions and obtain high quality single crystal. The study was conducted with respect to the heat transfer behavior between the crucible lid (seed attached to the crucible lid) and the lid. It is considered that the shape and size of graphite felts in the upper part of the crucible cover have a great influence on the radial temperature field of the crucible cover. The simplified model can be used to estimate the total radiant heat resistance and heat transfer between the crucible lid and the lid at different positions and different shapes and sizes of graphite felt openings. The factors that affect the heat transfer between the crucible lid and the lid are discussed. In addition, the feasibility of dynamically adjusting the thermal conditions of the crucible lid during growth is discussed.