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采用磁控溅射技术先在硅衬底上制备Ga2O3/Ti薄膜,然后在950℃时于流动的氨气中进行氨化反应制备GaN薄膜。X射线衍射(XRD)、傅立叶红外吸收光谱(FTIR)、选区电子衍射(SAED)和高分辨透射电子显微镜(HRTEM)的结果表明采用此方法得到了六方纤锌矿结构的GaN单晶纳米线。通过扫描电镜(SEM)观察发现纳米线的形貌,纳米棒的尺寸在50~150nm之间。
A Ga2O3 / Ti thin film was prepared on a silicon substrate by magnetron sputtering firstly, and then a GaN film was prepared by amination reaction in a flowing ammonia gas at 950 ° C. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), selected area electron diffraction (SAED) and high resolution transmission electron microscopy (HRTEM) results show that hexagonal wurtzite GaN single crystal nanowires are obtained by this method. The morphology of nanowires was observed by scanning electron microscopy (SEM). The size of nanorods was between 50 and 150 nm.