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采用化学气相沉积方法,在无催化剂的条件下,通过改变衬底位置在Si(100)衬底上制备出了高取向的磷掺杂ZnO纳米线和纳米钉.测试结果表明,当衬底位于反应源上方1.5 cm处时,所制备的样品为钉状结构,而当衬底位于反应源下方1 cm处时样品为线状结构.对不同形貌磷掺杂ZnO纳米结构的生长机理进行了研究.此外,在ZnO纳米结构的低温光致发光谱中观测到了一系列与磷掺杂相关的受主发光峰.还对磷掺杂ZnO纳米结构/n-Si异质结I-V曲线进行了测试,结果表明,该器件具有良好的整流特性,纳米线和纳米钉异质结器件的开启电压分别为4.8和3.2 V.
High-oriented phosphorus-doped ZnO nanowires and nano-spikes were prepared on Si (100) substrate by chemical vapor deposition (CVD) without catalyst under the condition of catalyst. The test results show that when the substrate is located The samples prepared at 1.5 cm above the reaction source were spike-like, whereas the samples were linear when the substrate was located 1 cm below the reaction source.The growth mechanism of phosphorus-doped ZnO nanostructures with different morphologies In addition, a series of acceptor luminescence peaks related to phosphorus doping were observed in the low-temperature photoluminescence spectra of ZnO nanostructures.V-doped ZnO nanostructures / n-Si heterojunction IV curves were also tested The results show that the device has good rectification characteristics, and the turn-on voltages of the nanowire and nano-nail heterojunction devices are 4.8 and 3.2 V, respectively.