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综述了国家同步辐射实验室在表面化学的同步辐射研究中的部分新进展。其中包括碱金属Ｋ和稀土金属Ｇｄ对半导体表面氧化和氮化的催化作用；ＧａＡｓ（１００）半导体表面采用ＣＨ３ＣＳＮＨ２硫钝化的新方法；稀土金属Ｇｄ在半导体表面的吸附及界面形成；一种新的氧化镁薄膜的制备方法。
Some new developments in the synchrotron radiation study of surface chemistry are summarized. Including the catalytic action of alkali metal K and rare earth metal Gd on the oxidation and nitridation of the semiconductor surface; a novel method of sulfur passivation of GaAs (100) semiconductor surface using CH3CSNH2; the adsorption and interface formation of rare earth metal Gd on the semiconductor surface; Magnesium oxide film preparation method.