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以Ag In Te Sb合金靶采用射频反应溅射在不同氧分压下制备了单层Ag In Te Sb O薄膜。对薄膜的反射光谱及光学常数 (n ,k)的研究结果表明 :在分压比PO2 /PAr =2 %～ 4%时制备的薄膜反射率较高 ,氩气保护下在30 0℃退火 30min后 ,在 5 0 0～ 70 0nm波长范围薄膜反射率增长可达 17%～ 2 5 % ;分压比PO2 /PAr=2 %时 ,薄膜在40 0～ 65 0nm波长范围有较强吸收 ,光学常数在退火前后也有较大差别。对薄膜静态记录性能的测试结果表明 :记录功率为 10mW ,脉宽为 10 0ns时 ,薄膜在记录前后反射率对比度高达 2 0 % ,具有良好写入灵敏性。连续多次进行写入 /擦除循环 ,擦除前后反射率对比度稳定 ,薄膜具有一定的可擦除性能。退火前后薄膜的X射线衍射 (XRD)结果说明退火后薄膜中仅有Sb的晶相 ,与Ag In Te Sb薄膜的结晶特性明显不同。薄膜的成分及各元素的化学状态用光电子能谱 (XPS)进行了分析。这类薄膜有望作为短波长高密度光存储材料。
A single-layer Ag In Te Sb O thin film was prepared by RF reactive sputtering at different oxygen partial pressure with Ag In Te Sb alloy target. The results of the reflection spectra and the optical constants (n, k) of the films show that the reflectivity of the films prepared at partial pressure ratio PO2 / PAr = 2% ~ 4% is high, annealed at 30 ℃ for 30min , The reflectance of the films increases by 17% ~ 25% at the wavelength range of 500 ~ 70 0nm. When the partial pressure ratio PO2 / PAr = 2%, the films have strong absorption in the wavelength range of 40 0 ~ There is also a big difference between the constants before and after annealing. The test results of the static recording performance of the film show that when the recording power is 10mW and the pulse width is 10 0ns, the contrast of the film before and after recording is as high as 20% with good writing sensitivity. The writing / erasing cycle is repeated many times in succession, the contrast ratio of the reflectance is stable before and after erasing, and the film has a certain erasable property. The results of X-ray diffraction (XRD) of the film before and after annealing show that the crystal phase of only Sb in the film after annealing is obviously different from that of the Ag In Te Sb film. The composition of the thin film and the chemical state of each element were analyzed by photoelectron spectroscopy (XPS). Such films are expected as short wavelength high density optical storage materials.