一.前言GaAs 半导体激光器,自成功地获得 GaAs—Ga_(1-x)Al_xAs 双异质结构(Double—Heterostructure,简称 DH)的外延生长以来,在短时间内得到了迅速发展。目前,GaAs—GaAlAs 双异质激光器,在数 mw～20mw 的输出功率下,室温连续工作寿命已达数千小时至1万小时以上,即使在80mw 的大输出功率下,也能达到3千小时的工作寿命。而且,根据高温加速寿命试验结果进行外推,其寿命己有10万小时的 I. Introduction GaAs semiconductor lasers have been rapidly developed in short time since the successful epitaxial growth of GaAs-Ga 1-x Al x As double heterostructure (DH). Currently, GaAs-GaAlAs double heterogenous laser, in the number of mw ~ 20mw output power, continuous operating temperature at room temperature has reached thousands of hours to 10,000 hours or more, even at 80mw large output power, can reach 3 thousand hours Working life. Moreover, according to the high temperature accelerated life test results extrapolation, its life expectancy has 100,000 hours