为了替换湿法蚀刻技术,因而等离子蚀刻技术受到注意。最初,根据圆筒形等离子蚀刻装置,剥掉光致抗蚀剂,活跃地进行丁关于多晶硅、单晶硅、Si_3N_4膜等蚀刻技术的研制。因为利用等离子化学活性的纯化学反应,所以蚀刻的结果,在本质上与所使用的溶液有显著不同。而且对避免由废液引起的公害,废液处理 In order to replace the wet etching technique, the plasma etching technique has attracted attention. Initially, a photoresist was removed by a cylindrical plasma etching apparatus, and development of etching techniques such as polycrystalline silicon, single crystal silicon, and Si_3N_4 film was actively performed. The result of the etching is essentially different from the solution used because of the pure chemical reaction that utilizes the plasma chemistry. And to avoid pollution caused by the waste, waste disposal