【摘 要】
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The CoSb3 and Y0.18Co4Sb12 compounds were synthesized by a metallurgical route. Their bulk materials were prepared by the hot-pressed process under vacuum. Ther
【机 构】
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College of Materials Science and Engineering,State Key Laboratory of Silicon Materials
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The CoSb3 and Y0.18Co4Sb12 compounds were synthesized by a metallurgical route. Their bulk materials were prepared by the hot-pressed process under vacuum. Thermoelectric properties of the samples were measured by the thermoelectric measurement system and the laser flash diffusivity apparatus. The carrier type conversion of hot-pressed CoSb3 was found at about 530 K, while the conversion was missed for the Y0.18Co4Sb12 sample. Electrical conductivity of the Y0.1sCo4Sb12 sample increased due to the increase of carder concentration,and its thermal conductivity decreased due to the enhancement of phonon scattering. The value of ZT, figure of merit, for the Y0.18Co4Sbl2 sample was obviously enhanced due to positive contribution of the electrical conductivity and the thermal conductivity.
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