论文部分内容阅读
在HFCVD系统中施加栅极偏压和衬底偏压,采用双偏压成核和栅极偏压生长的方法成功制备了高质量的纳米金刚石薄膜。采用显微Raman高分辨率SEM和AFM等现代理化分析手段分析纳米金刚石膜的微结构,结果表明双偏压显著促进了金刚石的成核密度,平均晶粒尺寸在20nm以内。试验观察和理论分析表明栅极偏压促进了热丝附近的等离子体浓度,提高了衬底附近的碳氢基团和氢原子浓度,提高了金刚石的成核密度、在保持晶粒的纳米尺寸的同时保持了较高的成膜质量和较低的生长缺陷。
Gate bias and substrate bias were applied in HFCVD system. High quality nanodiamond films were successfully prepared by dual-bias nucleation and gate bias growth. The microstructures of the nanodiamond films were analyzed by modern Raman spectroscopy such as Raman microscopy and AFM. The results showed that the dual-bias significantly enhanced the diamond nucleation density and the average grain size was within 20 nm. Experimental observation and theoretical analysis show that the gate bias promotes the plasma concentration near the hot wire, increases the concentration of hydrocarbon groups and hydrogen atoms in the vicinity of the substrate, and increases the nucleation density of the diamond. While maintaining the nano-size While maintaining a higher film quality and lower growth defects.