用分子束外延(MBE)技术生长了Ge/Si超薄型超晶格和Ge_xSi_(1-x)/Si合金型超晶格。用RHEED强度振荡技术生长出了非常陡峭和平整的Si/Ge异质结界面。在Si(001)上生长的一个单原子层Ge和一个单原子层Si的多层结构是可以得到的最薄的超晶格。合金型超晶格的厚度可满足器件制造的要求并避免了失配位错的产生。用XTEM、RBS及X射线衍射对外延晶体质量作了签定,用Raman谱和电调制反射谱对超晶格的光学特性进行了研究。 Ge / Si ultra-thin superlattices and Ge_xSi_ (1-x) / Si superlattices were grown by molecular beam epitaxy (MBE). A very steep and flat Si / Ge heterojunction interface was grown using RHEED intensity oscillation. The multilayer structure of a single atomic layer Ge and a single atomic layer Si grown on Si (001) is the thinnest superlattice that can be obtained. The thickness of the alloyed superlattice satisfies the device fabrication requirements and avoids misfit dislocations. The quality of the epitaxial crystal was signaled by XTEM, RBS and X-ray diffraction. The optical properties of the superlattice were studied by Raman spectroscopy and electrical modulation reflectance spectroscopy.