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本文报道一种具有新颖“Γ”形栅结构的砷化镓振荡场效应晶体管,它不但具有较低的调频噪声,而且具有相当高的频率稳定度,是微波固态源较为理想的振荡器件。
In this paper, we report a gallium arsenide oscillating field effect transistor with a novel “Γ” gate structure, which not only has lower FM noise but also has a rather high frequency stability, and is an ideal oscillator for microwave solid state sources.