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提出了一种新结构的 IGBT,取名为低功耗 IGBT(L PL- IGBT) ,它具有离子注入形成的超薄且轻掺杂的背P型发射区 ,从而具有 NPT- IGBT的优点 ;同时具有由衬底预扩散残留层构成的 n型缓冲层 ,又具有 PT- IGBT的优点 .计算机仿真结果证明 ,它的关断损耗比 PT- IGBT和 NPT- IGBT降低一倍左右 .它的结构比 FSIGBT更适合于实际生产
A new IGBT structure named LPL-IGBT is proposed, which has the advantages of NPT-IGBT due to its ultra-thin and lightly doped back-p-type emitter formed by ion implantation. At the same time, it has the n-type buffer layer formed by the pre-diffusion of the substrate and has the advantages of PT-IGBT.Computer simulation results show that its turn-off loss is about twice lower than that of PT-IGBT and NPT-IGBT. More suitable than FSIGBT actual production