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为了解决全数控电感电容振荡器(fully digitallycontrolled inductor-capacitor oscillator,DCO)大信号工作时所引起的数控变容管的非线性问题,在对该种非线性进行分析的基础上,提出一种背靠背串联数控金属氧化物半导体(metal oxide semiconductor,MOS)变容管。该结构通过将两支MOS变容管反方向串联,有效改善了非线性,从而降低了DCO的相位噪声。在中芯国际0.18μm互补MOS工艺下设计了采用背靠背串联数控MOS变容管的DCO。仿真结果表明:当该DCO振荡在3.4 GHz的中心频率时,在1.2 MHz频偏处的相位噪声为-129.4 dBc/Hz,与使用普通数控MOS变容管的DCO相比,其相位噪声最多可改善8.1 dB。
In order to solve the nonlinearity of NC varactor caused by fully digitallycontrolled inductor-capacitor oscillator (DCO) large-signal operation, based on the analysis of this kind of nonlinearity, a back-to-back Serial Metal-Oxide-Semiconductor (MOS) Varactor. The structure of the two MOS varactor in series by the reverse direction, effectively improving the non-linearity, thereby reducing the DCO phase noise. In the SMIC complementary 0.18μm MOS technology designed with a back-to-back serial NC MOS varactor DCO. The simulation results show that when the DCO oscillates at 3.4 GHz center frequency, the phase noise at -12.9 MHz offset is -129.4 dBc / Hz. Compared with the DCO using common NC MOS varactor, the phase noise can be up to Improve by 8.1 dB.