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我厂生产TTL双极型数字电路,采用一次外延两次扩散的p-n结隔离技术。即隐埋扩散—外延—隔离扩散。在此就隐埋扩散谈谈点滴看法和体会。 1.工艺条件 予氧化: 炉温=1180℃,水温=95℃。 氧气流量:700～800毫升/分 脱水: 炉温=1230℃,氮气流量:1000毫升。 时间=20～30分。
I plant TTL bipolar digital circuit production, using an epitaxial two diffusion p-n junction isolation technology. That is buried diffusion - epitaxial - isolated diffusion. Here on the proliferation of talk about bit by bit views and experience. 1. Process conditions to oxidation: furnace temperature = 1180 ℃, water temperature = 95 ℃. Oxygen flow: 700 ~ 800 ml / min Dehydration: Furnace temperature = 1230 ℃, Nitrogen flow: 1000 ml. Time = 20 ~ 30 minutes.