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本文叙述用高温氢退火处理提高SoS膜的结晶质量的实验结.SOS膜的光吸收因子F_A值在氢退火温度920～1020℃,4.5小时下可下降20～30%,达到126×10~6cm~(-2).SOS膜横断面电镜观察证明,SOS膜结晶质量的改善是与界面附近微孪晶、层错等缺陷的减少有关.
In this paper, the experimental results of improving the crystal quality of SoS film by high temperature hydrogen annealing are described.The light absorption factor F_A value of the SOS film can be reduced by 20-30% at a hydrogen annealing temperature of 920-1020 ° C. and a temperature of 126 × 10-6 cm ~ (-2) .SOS film cross-section electron microscopy showed that the improvement of SOS film quality is related to the reduction of micro-twins and faults near the interface.