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室温下在 Ni Cr合金 ( Hastelloy c-2 75)基底上应用 Ar+ 离子源辅助 ,准分子脉冲激光沉积了Ce O2 薄膜 .结果表明 :在合适的外部条件控制下 ,直接在 Ni Cr合金基底上可以制备出 c-轴取向的 Ce O2薄膜 ,但这时的 Ce O2 薄膜在其 a-b平面内没有观察到织构的信息 ;进一步在相同的条件下 ,首先在 Ni Cr合金基底上制备一层 YSZ( Yttria-Stabilized Zirconia) ,再在 YSZ/Ni Cr上制备 Ce O2 薄膜 ,这时的 Ce O2薄膜不但是 c-轴取向 ,同时在其 a-b平面内织构 .
Ar O2 source-assisted and excimer laser deposition of Ce O2 film on Ni-Cr alloy (Hastelloy c-2 75) substrate at room temperature.The results show that under the proper external conditions, A c-axis oriented Ce O2 film was prepared, but no texture information was observed in the ab plane of the Ce O2 film at this time. Further, under the same conditions, a layer of YSZ Yttria-Stabilized Zirconia), then Ce O2 thin film was prepared on YSZ / Ni Cr. At this time, the Ce O2 thin film was not only c-axis oriented but also textured in the ab plane.