【摘 要】
：
A few monolayers of organic semiconductors adjacent to the dielectric layer are of vital importance in organic field-effect transistors due to their dominant role in charge transport.In this report,the 2-nm-thick polymer monolayers based on poly(3-hexylth
【机 构】
：
Key Laboratory of Microelectronic Devices and Integrated Technology,Institute of Microelectronics,Ch
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A few monolayers of organic semiconductors adjacent to the dielectric layer are of vital importance in organic field-effect transistors due to their dominant role in charge transport.In this report,the 2-nm-thick polymer monolayers based on poly(3-hexylthiophene)with different molecular weights (Mn) were fabricated using dip-coating technique.During the monolayer (solid state) formation from the solution,a disorder-to-order transition of polymer conformation is observed through UV-vis absorption measurement.Mean-while,high Mn polymer monolayer generates higher crystalline fibrillar microstructure than the low Mn one due to the stronger π-π intermolecular packing between polymers.More importantly,the solution aging procedure is utilized to further improve the mor-phology of polymer monolayers.It is obvious that after aging for 6 d,both fiber dimension and density as well as conjugation length are significantly increased under the same processing conditions in comparison to the fresh solution,and consequently the field-effect mobilities are remarkably enhanced by 2-4 times.Note that the maximum mobility of 0.027 cm2·V-1·s-1 is among the highest reported values for poly(3-hexylthiophene) monolayer transistors.These results demonstrate a simple but powerful strategy for boosting the device performance of polymer monolayer transistors.
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