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本文叙述了一种以隧道场感应结作为发射结的新型晶体管。初步实验表明:器件具有电流增益功能与极低的h_(FE)温度系数,可望制成温度稳定性极高的器件。
This article describes a new type of transistor that uses tunneling inductors as emitter junctions. Preliminary experiments show that: the device has a current gain function and very low h_ (FE) temperature coefficient, is expected to be made of high temperature stability of the device.