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采用金属有机物化学气相沉积(MOCVD)法在p型S i(100)衬底上生长未掺杂的n型ZnO薄膜。在不同的生长温度下,c轴取向ZnO薄膜被生长在S i衬底上,生长所采用的锌源为二乙基锌(DEZn),氧源为氧气(O2)。通过X射线衍射(XRD)、光电子能谱(XPS)和荧光光(PL)谱研究了薄膜的结构和光学特性。研究表明温度为610℃时生长的ZnO薄膜显示最好的结构和光学特性。此外,所生长n-ZnO/p-S i异质结的I-V特性曲线都表现明显的整流特性,且反向漏电流很小。在620℃生长的异质结的漏电流相对最大,大于在其它温度下生长的异质结的漏电流。
An undoped n-type ZnO thin film was grown on a p-type Si (100) substrate by a metal-organic chemical vapor deposition (MOCVD) method. At different growth temperatures, the c-axis oriented ZnO thin films were grown on the Si substrate. The zinc source used for the growth was diethylzinc (DEZn) and the oxygen source was oxygen (O2). The structure and optical properties of the films were investigated by X-ray diffraction (XRD), photoelectron spectroscopy (XPS) and fluorescence spectroscopy (PL). Studies have shown that ZnO films grown at 610 ° C show the best structural and optical properties. In addition, the I-V characteristic curves of the grown n-ZnO / p-Si heterojunction all show obvious rectifying characteristics with a small reverse leakage current. The leakage current of the heterojunction grown at 620 ° C. is relatively larger than the leakage current of the heterojunction grown at other temperatures.