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介绍了GaAs低噪声器件电磁脉冲效应实验响应的易损敏感端,对所确定的敏感端注入电磁脉冲方波,研究了器件在静态时的损伤阈值。根据GaAs器件易损性薄弱环节,从GaAs器件的结构、内部缺陷等出发,探索电磁脉冲对GaAs器件易损性薄弱环节的损毁机理。通过对毁伤实验分析,进一步阐述了电磁脉冲对器件存在潜在不稳定性失效,对器件和整机系统设计者和使用者具有一定的参考意义。GaAs微波低噪声器件在EMP正脉冲注入情况下,获得的损伤阈值约为3.024μJ。在EMP负脉冲注入情况下,损伤阈值约为10.02μJ。初步认为GaAs FET的正脉冲EMP比负脉冲EMP更易损伤。
The vulnerable sensitive end of the experiment response of GaAs low noise device is introduced. The square wave of electromagnetic pulse is injected into the sensitive end of the device, and the damage threshold of the GaAs low noise device is studied. According to the vulnerability of the GaAs device, the mechanism of the vulnerability of the GaAs device is explored based on the structure and internal defects of the GaAs device. Through the analysis of the damage experiment, further elaborated the potential instability of the electromagnetic pulse on the device failure, the device and the whole system designers and users have a certain reference value. GaAs microwave low noise device in the case of EMP positive pulse injection, the damage threshold obtained is about 3.024μJ. In the case of EMP negative pulse injection, the damage threshold is about 10.02 μJ. Preliminary thought GaAs FET positive pulse EMP more easily than the negative pulse EMP damage.