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对基于非电离能量损耗(NIEL)的位移损伤等效性研究方法进行了讨论,计算了不同能量质子在InGaAsP材料中的NIEL。利用解析方法对库仑散射引起的NIEL进行了计算,分析了不同库仑散射模型的适用范围,并利用Monte-Carlo方法对核反应引起的NIEL进行了计算。以InGaAsP多量子阱激光二极管为研究对象,开展了4、5和8 MeV质子辐照实验,获得了激光二极管的阈值电流损伤系数。研究结果表明:实验用不同能量质子辐射环境下的阈值电流损伤系数测试结果与NIEL理论计算结果之间呈线性关系。
Displacement damage equivalence method based on non-ionized energy loss (NIEL) is discussed, and the NIEL of different energy protons in InGaAsP materials is calculated. The analytical method was used to calculate the NIEL caused by Coulomb scattering, and the applicable range of different Coulomb scattering models was analyzed. The NIEL caused by nuclear reaction was calculated by Monte-Carlo method. Taking InGaAsP multi-quantum well laser diode as the research object, experiments of 4, 5 and 8 MeV proton irradiation were carried out, and the threshold current damage coefficient of the laser diode was obtained. The results show that there is a linear relationship between the threshold current damage coefficient and the NIEL theoretical calculation under different energy proton radiation conditions.