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本文提出了一种简单而有效的砷化镓场效应晶体管(G_aA_sFET)放大器的分析方法。场效应晶体管(FET)用它的非线性动态电路模型表示,该模型计及包括栅一漏极电压击穿等器件的主要的非线性效应。文章详细地叙述了引出模型参量的证明过程并给出了实例。运用片状谐波平衡技术可完成单个输入谐波信号的放大器响应的计算。由于用原型时这种技术相当费时间,因此解网络方程用的最佳化程序已被牛顿-拉富森算法代替。对一个2SK273型G_aA_sFET微波放大器,用本文提出的方法计算所得的特性与其实验结果作了比较。可以看到,在9.5千兆赫上和在很宽的偏置电压与输入功率电平范围内二者十分吻合。
This paper presents a simple and effective method for the analysis of gallium arsenide field-effect transistor (G_aA_sFET) amplifiers. The field-effect transistor (FET) is represented by its nonlinear dynamic circuit model that accounts for the major non-linear effects of devices such as gate-drain voltage breakdown. The paper describes in detail the process of proving the model parameters and gives examples. The calculation of the amplifier response of a single input harmonic signal can be done using a flaky harmonic balance technique. Due to the time-consuming nature of this technique with prototypes, the optimization procedure for solving network equations has been replaced by the Newton-Lafusson algorithm. For a 2SK273 G_aA_sFET microwave amplifier, the calculated results obtained by the proposed method are compared with the experimental results. It can be seen that both agree very well at 9.5 GHz and over a wide range of bias voltages and input power levels.