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利用等离子体浸没离子注入技术在多晶硅基底上制备了黑硅材料,利用扫描电镜、分光光度计和微波光电导衰减测试仪对黑硅的组织结构、光吸收率和少数载流子寿命进行了测试分析,发现黑硅呈现多孔组织,在可见光波段的平均吸收率大于94%,其平均少数载流子寿命为5.68μs.研究了注入工艺参数对黑硅的影响,发现工作气体SF_6和O_2流量比对黑硅的组织性能影响最大,当其为2.80时制备的黑硅组织性能最好.
Black silicon material was prepared on polycrystalline silicon substrate by plasma immersion ion implantation technology. The structure, optical absorption and minority carrier lifetime of black silicon were tested by scanning electron microscopy, spectrophotometer and microwave photoconductivity attenuation tester The results show that the average absorption rate of black silicon is more than 94% and the average minority carrier lifetime is 5.68μs. The effect of implantation process parameters on black silicon is studied. It is found that the flow rate of working gas SF_6 and O_2 On the organization of black silicon most affected, when it is 2.80 prepared the best performance of black silicon.