论文部分内容阅读
2.晶体三极管的主要参数晶体三极管参数是用来表示晶体管特性和范围的,因此选用晶体管时必须了解它的主要参数。晶体三极管主要参数有:电流放大系数β、β,集电极—基极反向电流Icbo,集电极—射极穿透电流Iceo,集电极最大允许电流Icm,集电极—射极反向击穿电压BVceo,集电极—基极反向击穿电压BVcbo,集电极最大允许耗散功率Pcm和共发射极截止频率f_β(共基极截止频率f_α)、特征频率f_T等。这些晶体三极管的参数也是设计电路、选用晶体管的主要依据。
2. The main parameters of the transistor Transistor parameters are used to indicate transistor characteristics and range, so the choice of transistor must understand its main parameters. The main parameters of the transistor are: current amplification factor β, β, collector-base reverse current Icbo, collector-emitter penetration current Iceo, collector maximum allowable current Icm, collector-emitter reverse breakdown voltage BVceo, collector-base reverse breakdown voltage BVcbo, collector maximum allowable power dissipation Pcm and common emitter cut-off frequency f_β (common base cut-off frequency f_α), the characteristic frequency f_T and so on. The parameters of these transistors is also the design of the transistor, the main basis for the selection of transistors.