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在对P~+-N结正向电容进行全面分析的基础上,本文提出了一种使P~+-N结正向势垒电容异常变化的掺杂分布模型,它的特点是:结电容在正向偏压下有比普通突变结快得多的变化速度和较大的变化幅度.把该模型应用于结电容为 0.08—0.25 pF的 GaAs参放变容管,结果表明,它提高了变容管的电容变化系数,并具有较高的零偏压截止频率,而且还降低了参放所需的泵功率.得到的样管参数为:零偏压截止频率400—700千兆赫、电容变化系数0.17-0.225,参放工作所需的泵功率仅10-20毫瓦.
Based on a comprehensive analysis of the forward capacitance of P ~ + -N junctions, a doping distribution model is proposed to make the forward barrier capacitance of P ~ + -N junction change abnormally. Its characteristics are: junction capacitance Under the forward bias, there is a much faster change rate and a larger variation range than the normal one.Application of this model to the GaAs cell with varactor junction capacitance of 0.08-0.25 pF shows that it improves Varactor capacitance variation coefficient, and has a high zero bias cut-off frequency, but also reduces the pump power required for participating in. The resulting sample tube parameters are: zero bias cut-off frequency of 400-700 GHz, capacitance The coefficient of variation is 0.17-0.225, and pump power required for participating work is only 10-20 milliwatts.