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本文叙述了LPE生长的In_(1-x)Ga_xAs/InP结构的X射线测试原理和方法,分析了该结构的晶格失配、组分和应力等测试结果。采用X射线形貌技术,对外延层和界面进行了观察和分析。结果表明,适当条件下能生长出晶格匹配十分好的晶片,它们在直到11μm厚的情况下无组分梯度;室温下晶格匹配的无失配位错的三元层可厚到9μm;室温下处于较大的负晶格失配时,亦可在9μm或4μm以下不产生失配位错或微裂纹,且表面光亮。不产生失配位错或微裂纹的晶格失配、厚度和组分范围,可比目前报导的大许多。
In this paper, the principle and method of X-ray measurement of In_ (1-x) Ga_xAs / InP grown by LPE are described. The test results of lattice mismatch, composition and stress of the structure are also analyzed. Using X-ray topography, the epitaxial layer and interface were observed and analyzed. The results show that under proper conditions, the crystal lattice can be grown very good chip, they are up to the thickness of 11μm without component gradient; lattice mismatch at room temperature mismatch dislocation of the ternary layer can be thick to 9μm; At room temperature in the larger negative lattice mismatch, but also in the 9μm or less below 4μm misfit dislocations or micro-cracks, and the surface bright. The lattice mismatch, thickness and composition range that do not produce misfit dislocations or microcracks can be much larger than reported so far.