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提出了发射极非均匀指间距技术以增强多发射极指SiGe HBT在不同环境温度下的热稳定性。通过建立热电反馈模型对采用发射极非均匀指间距技术的SiGe HBT进行热稳定性分析,得到多发射极指上的温度分布。结果表明,与传统的均匀发射极指间距SiGe HBT相比,在相同的环境温度及耗散功率下,采用发射极非均匀指间距技术的SiGe HBT,其最高结温明显降低,热阻显著减小,温度分布更加均匀,有效地提高了多发射极指功率SiGe HBT在不同环境温度下的热稳定性。
The technique of non-uniform finger spacing of emitter is proposed to enhance the thermal stability of multi-emitter SiGe HBT under different ambient temperatures. The thermal stability of SiGe HBT with non-uniform emitter finger spacing is obtained through the establishment of a thermoelectric feedback model to obtain the temperature distribution on the multi-emitter finger. The results show that the SiGe HBT with non-uniform emitter finger spacing reduces significantly the maximum junction temperature and significantly reduces the thermal resistance at the same ambient temperature and dissipated power compared to the traditional uniform emitter-finger spacing SiGe HBT Small, the temperature distribution more uniform, effectively improve the multi-emitter finger power SiGe HBT in different ambient temperature thermal stability.