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用磁控反应溅射法在玻璃和钼片衬底上制备VOx/TiOx/Ti多层薄膜。用X射线衍射(XRD)、QJ31单臂电桥、薄膜内耗仪等测试了薄膜的晶体结构、电阻、内耗。分别进行了薄膜的制备工艺与内耗研究。测试分析结果表明:试样的晶体结构、电阻-温度曲线、杨氏模量的突变均表明多层薄膜在66℃左右发生相变。样品的电阻温度系数为-4.35%/℃。并且真空退火有利于二氧化钒相生成。
Preparation of VOx / TiOx / Ti Multilayer Thin Films on Glass and Molybdenum Substrates by Magnetron Reactive Sputtering. The crystal structure, electrical resistance and internal friction of the films were tested by X-ray diffraction (XRD), QJ31 single arm bridge and thin film internal friction tester. The preparation of the film and internal friction were studied. The results of the test and analysis show that the crystal structures, the resistance-temperature curves and the Young’s modulus mutations all indicate that the multi-layer thin films undergo phase transformation at about 66 ℃. The temperature coefficient of resistance of the sample is -4.35% / ° C. And vacuum annealing is beneficial to vanadium dioxide phase formation.