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InGaN-based light-emitting diode(LED)as for the replacement of conventional fluorescent lighting source still needs a great effort to improve the light-extracting efficiency as well as internal quantum efficiency of LEDs.Surface plasmon technology has recently attracted considerable interest,because the spontaneous emission rate and the light extraction efficiency of a light-emitting device can be simultaneously enhanced through the coupling between an InGaN quantum well and surface plasmons.The surface plasmon-emitter coupling technique would lead to high brightness multichip white LEDs that offer realistic alternatives to conventional fluorescent light sources.In this article,the possible enhancement mechanism of surface plasmon is discussed,and then recent developments of surface-plasmon-enhanced light-emitting diode are introduced.
InGaN-based light-emitting diode (LED) as for the replacement of conventional fluorescent lighting source still needs a great effort to improve the light-extracting efficiency as well as internal quantum efficiency of LEDs.Surface plasmon technology has recently attracted accumulate interest, because the spontaneous emission rate and the light extraction efficiency of a light-emitting device can be simultaneously enhanced through the coupling between an InGaN quantum well and surface plasmons. surface plasmon-emitter coupling would lead to high brightness multichip white LEDs that offer realistic alternatives to conventional fluorescent light sources. In this article, the possible enhancement mechanism of surface plasmon is discussed, and then recent developments of surface-plasmon-enhanced light-emitting diodes are introduced.