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热处理是研究半导体性能的一种方法,对于Si~[1,2]、Ge~[3,4]、PbS~[5,6]已有比较广泛、深入的研究,但对于Ⅲ-Ⅴ族化合物半导体的热处理研究是始于1959年Dixon等对P型InAs的研究,1960年注意中心由InAs转到GaAs,并进行了仔细的研究,对这两种材料一般认为铜是引起热处理效应的根源。关于InSb热处理研究,较全面的报导要算Hulme和Mullin的评述性文章,共做了二类实验:一类是真空中,500℃处理数小时,整个样品变为P型,发现P型载流子的增减是和石英管的纯度有关,并推论热转换是由石英中释放出来的快扩散杂质X造成,其扩散系数(500℃时)D_x>10~(-6)cm~2/
Heat treatment is a method to study the properties of semiconductors, and has been widely and in-depth studied for Si ~ [1,2], Ge ~ [3,4], PbS ~ [5,6] The study of semiconductor heat treatment began in 1959 by Dixon et al. On P-type InAs. In 1960, attention was paid to the shift from InAs to GaAs and careful study was conducted. Both of these materials are generally considered to be the source of heat treatment. A more comprehensive review of the InSb heat treatment study, which accounts for Hulme and Mullin’s commentary, has done two types of experiments: one in vacuum at 500 ° C for several hours, the entire sample becoming P-type, and a P-type current-carrying The increase or decrease of the sub-population is related to the purity of the quartz tube. It is deduced that the thermal conversion is caused by the fast-diffusion impurity X released from the quartz. The diffusion coefficient (at 500 ° C) of D x> 10 -6 cm 2 /