利用１．０６μｍ脉冲Ｎｄ∶ＹＡＧ激光，以含Ｚｎ的固态杂质源在化合物半导体ＧａＡｓ基片上进行诱导扩散，作出了Ｐ－Ｎ结。获得了亚微米的扩散结结深及１０２０ｃｍ－３量级的表面掺杂浓度，并利用二次离子质谱仪对扩散样品进行成分的逐层扫描分析，研究了结深和掺杂浓度与辐照激光脉冲数、单脉冲激光能量密度的关系 Using 1.06μm pulsed Nd: YAG laser, a Zn-containing solid-state impurity source was used to induce diffusion on a compound semiconductor GaAs substrate to make a P-N junction. The sub-micron diffusion junction depth and the surface doping concentration of 1020 cm-3 were obtained. The layer-by-layer scanning analysis of the diffusion samples was carried out by using the secondary ion mass spectrometer. The effects of the junction depth and the doping concentration with the irradiation laser Pulse number, single-pulse laser energy density relationship