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研究了电感耦合等离子体原子发射光谱法(ICP—AES)测定高纯铝中微量Ga元素(0.001~0.01%)的检测方法。详细讨论了基体元素和共存元素对Ga元素的光谱干扰,以及溶解盐酸用量对测量结果的影响;选择了合适的分析谱线,同时测定了分析方法的检出限,方法快速、准确。
The determination of trace Ga (0.001 ~ 0.01%) in high purity aluminum by inductively coupled plasma atomic emission spectrometry (ICP-AES) was studied. The interference of matrix elements and coexisting elements on Ga element and the influence of dissolved hydrochloric acid on the measurement results were discussed in detail. The suitable analytical lines were selected and the detection limits of the analytical methods were determined simultaneously. The method was rapid and accurate.