通过实验测量常压热分解CVD工艺制备的F掺杂SnO2薄膜的方块电阻、膜厚、形貌、微结构、中远红外反射率等性质,详细研究了基板温度对SnO2薄膜微结构的影响和微结构与薄膜电学、光学性能之间的关系。研究发现,将基板温度从375℃提高到525℃以上,薄膜结晶程度大大提高,薄膜厚度从25nm提高到近300nm,方块电阻下降了两个数量级,中远红外的反射率达到了85%以上。 The effects of substrate temperature on the microstructure of SnO2 thin films were studied in detail by experimentally measuring the sheet resistance, film thickness, morphology, microstructure, and far-infrared reflectivity of F-doped SnO2 thin films prepared by atmospheric pyrolysis CVD process The relationship between structure and thin film electrical and optical properties. The study found that the substrate temperature increased from 375 ℃ to 525 ℃ above the degree of crystallization of the film greatly increased the thickness of the film from 25nm to nearly 300nm, the sheet resistance decreased by two orders of magnitude, far infrared reflectivity reached more than 85%.