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中国有色金属学会半导体材料学术委员会主办的一九八七年全国砷化镓及有关化合物会议,于1987年10月19日至24日在北京平谷县举行。到会代表近130人,会上交流论文共127篇。来自各工业部、科学院有关研究所、工厂与高等院校的代表聚会一堂,进行了论文报告、讨论和洽谈,气氛十分活跃。会议充分反映了自上届会议以来我国在GaAs及有关化合物材料方面的显著进展。 会议有八个特邀报告作为大会发言。特别是中国科学院学部委员林兰英先生的两个特邀报告受到与会代表的极大重视。在题为《微重力下从熔体生长GaAs单晶性质的研究》的第一个报告中介绍了在我国自制卫星上于微重力下研制GaAs单晶的工作,一次成功,并介绍了单晶的TEM,CL,DLTS等测试结果。在第二个报告《从化合物半导体器件、集成电路来展望
The 1987 National Conference on Gallium Arsenide and Related Compounds hosted by the Academic Committee of Semiconductor Materials of the China Nonferrous Metals Society was held in Pinggu County, Beijing from October 19 to October 24, 1987. Nearly 130 delegates attended the conference, and 127 papers were exchanged at the conference. From the Ministry of Industry, Academy of Sciences on the Institute, factories and institutions of higher learning representatives gathered for the paper report, discussion and discussion, the atmosphere is very active. The meeting fully reflected our remarkable progress in GaAs and related compound materials since the last session. There are eight guest speakers at the conference as speakers. In particular, two specially invited reports by Academician Lin Lanying, member of the Chinese Academy of Sciences, received great attention from the delegates. The first report, entitled “Studies on the Properties of GaAs Single Crystals from Melt Growth under Microgravity”, described the successful development of GaAs single crystals on our own satellites under microgravity, and introduced single crystal TEM, CL, DLTS and other test results. In the second report "Looking ahead from compound semiconductor devices, integrated circuits