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氧化锌(ZnO)是直接宽带隙半导体材料,有高达60meV的激子束缚能,是下一代短波长光电材料的潜在材料。首先制备了优良的多孔氧化铝(Anodic Aluminum Oxide)有序孔洞阵列;以其为模板,采用直流电化学沉积的方法,在其规则排列的孔中沉积得到锌的纳米线;然后将其在高温下氧化,得到氧化锌的纳米线。XRD图显示Li掺杂前后的ZnO纳米线具有较好的晶态结构。对Li掺杂前后的ZnO纳米线进行光学特性测量,结果表明,ZnO纳米线有两个发光峰,分别位于382nm和508nm处;Li掺杂较大地改善了ZnO纳米线的发光性能,本征发光峰移到395nm处,蓝绿发光强度也有了很大程度的提高。
Zinc oxide (ZnO) is a direct wide bandgap semiconductor material with an exciton binding energy of up to 60 meV and is a potential material for the next generation of short-wavelength optoelectronic materials. First, an ordered array of porous Anodic Aluminum Oxides was prepared. As a template, DC electrochemical deposition was used to deposit zinc nanowires in regularly arranged pores. Then, the nanowires were deposited at high temperature Oxidation, to obtain zinc oxide nanowires. XRD patterns show that the ZnO nanowires before and after Li doping have a good crystalline structure. The optical properties of ZnO nanowires before and after Li doping were measured. The results showed that ZnO nanowires had two luminescence peaks at 382nm and 508nm, respectively. Li doping improved the luminescent properties of ZnO nanowires. The intrinsic luminescence Peak shifted to 395nm, blue-green light intensity has also been greatly improved.