论文部分内容阅读
在热循环疲劳加载条件下 ,使用 C- SAM高频超声显微镜测得了 B型和 D型两种倒扣芯片连接在焊点有无断裂时芯片 /底充胶界面的分层和扩展 ,得到分层裂缝扩展速率 .同时在有限元模拟中使用断裂力学方法计算得到不同情况下的裂缝顶端附近的能量释放率 .最后由实验裂缝扩展速率和有限元模拟给出的能量释放率得到可作为倒扣芯片连接可靠性设计依据的 Paris半经验方程
Under the condition of thermal cycling fatigue loading, C-SAM high-frequency ultrasonic microscope was used to measure the delamination and expansion of chip-to-substrate interface when B-type and D-type flip chips were connected with or without solder joints Layer crack growth rate.At the same time in the finite element simulation using the fracture mechanics method to calculate the energy release rate near the crack tip in different circumstances.Finally by the experimental crack propagation rate and finite element simulation gives the energy release rate can be used as an undercut Paris semi-empirical equation based on reliability design of the chip connection