论文部分内容阅读
金属等离子体浸没注入(MEPIII)技术与金属蒸气真空弧(MEVVA)源注入技术有相同之处，也有各自不同的特点。采用两种方法进行钛离子注入硅，RBS方法分析注入层，并对两种注入技术予以比较。“,”MEVVA ion implantation is similar to metal plasma immersion ionimplan tation. The Ti ion implantation into silicon substrat was conducted with the two ion implantation configurations. The RBS was used to analyze the implanted layers and two techniques were compared.