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晶闸管器件的断态(开断状态)电压上升率du/dt和通态(导通状态)电流上升率di/dt是决定可控金属氧化物避雷器(CMOA)晶闸管阀工作安全性的关键参数。以长治—南阳—荆门特高压交流试验示范工程为背景,对晶闸管阀中晶闸管器件需要承受的最大du/dt和di/dt进行了仿真计算,提出了技术要求,并给出了限值要求,即du/dt和di/dt均不允许超过其临界值du/dtcrit和di/dtcrit。根据实际使用条件对所选晶闸管器件的du/dtcrit和di/dtcrit进行了试验测试。测试结果和技术要求对比表明:2.0～3.0英寸晶闸管du/dtcrit不小于45kV/μs,大于技术要求28.3kV/μs,无需限制措施;di/dtcrit为865～910A/μs,远小于技术要求87kA/μs,须采取适当的限制措施。研究表明,采用3～5mH的限流电抗器可以将di/dt限制在容许范围内,且限流电抗器对CMOA限制系统操作过电压的效果影响不大,可以采用限流电抗器限制晶闸管器件的di/dt。
Thyristor Device Break Status (Breaking State) Voltage Rise Rate du / dt and on state (on state) The rate of current rise di / dt is a key parameter that determines the operational safety of a thyristor valve that is controlled by a metal-oxide-semiconductor arrester (CMOA). Taking the Changzhi-Nanyang-Jingmen UHV AC pilot project as the background, the maximum du / dt and di / dt required for thyristor devices in thyristor valves are simulated and the technical requirements are proposed. The limits are also given, Ie du / dt and di / dt are not allowed to exceed their critical values du / dtcrit and di / dtcrit. The du / dtcrit and di / dtcrit of the selected thyristor devices were tested according to the actual conditions of use. The comparison between the test results and the technical requirements shows that the du / dtcrit of the 2.0-3.0-inch thyristor is not less than 45kV / μs, which is larger than the technical requirement of 28.3kV / μs without limitation; the di / dtcrit is 865-910A / μs, much smaller than the technical requirement of 87kA / μs, appropriate restrictions must be taken. The research shows that di / dt can be limited within the allowable range by using 3 ~ 5mH current-limiting reactor, and the current-limiting reactor has little effect on the effect of CMOA limiting system operating over-voltage. The current limiting reactor can be used to limit the thyristor device Di / dt.