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对1064nm谐振腔增强型(RCE)光电探测器(PD)的光电响应特性进行了分析研究.利用MBE生长技术得到有源区分别为量子阱和量子点的1064nmRCE探测器的外延片,并对制作的探测器进行了各种光电特性测试.结果表明量子阱结构的RCE探测器量子效率峰值达到57%,谱线半宽6~7nm,峰值波长1059nm;而量子点结构的RCE探测器量子效率峰值达到30%,谱线半宽5nm,峰值波长1056nm.通过分析量子效率和吸收系数之间的关系,对两种结构器件的吸收进行了比较,发现虽然量子点探测器的吸收小,但通过合理设计共振腔等方法也可以达到较高的量子效率.两种结构的器件都有很好的I-V特性.
The optoelectronic response characteristics of a 1064 nm RCE photodetector (PD) were analyzed.Using MBE growth technology, epitaxial wafers of 1064 nm RCE detectors with active regions of quantum wells and quantum dots were obtained respectively. The results show that the quantum efficiency of the quantum well structure is 57%, the half width of the spectrum is 6-7 nm, and the peak wavelength is 1059 nm. The quantum efficiency peak of RCE detector in quantum dot structure Up to 30%, the spectral half-width of 5nm, the peak wavelength of 1056nm.By analyzing the relationship between quantum efficiency and absorption coefficient, the absorption of the two kinds of structural devices were compared and found that although the quantum dot detector absorption is small, The design of resonant cavity and other methods can also achieve higher quantum efficiency.The two structure of the device has good IV characteristics.