论文部分内容阅读
采用气相流动吸附法,以N_2为载气携带TiCl_4通过γ-Al_2O_3床,使TiCl_4吸附在γ-Al_2O_3表面上,经水解、干燥和焙烧制得TiO_2/γ-Al_2O_3复合载体。用XRD,LRS和TEM等表征手段研究了TiO_2在γ-Al_2O_3表面上的分散状态。结果表明,TiO_2在γ-A1_2O_3表面有一分散阈值(0.168 g TiO_2/g γ-Al_2O_3,在阈值以下TiO_2以单层或亚单层分散形式存在,在阈值以上则出现晶相,未发现有体相化合物生成。测定了TiCl_4穿透曲线和吹扫曲线,为用气相流动吸附法制备TiO_2/γ-Al_2O_3复合载体工艺条件的选择提供了基础。
The gas-phase flow adsorption method was used to carry TiCl 4 through γ-Al 2 O 3 bed with N 2 as the carrier gas to adsorb TiCl 4 on the surface of γ-Al 2 O 3. The TiO 2 / γ-Al 2 O 3 composite carrier was obtained by hydrolysis, drying and calcination. The dispersion of TiO_2 on γ-Al_2O_3 surface was investigated by XRD, LRS and TEM. The results show that TiO 2 has a dispersion threshold (0.168 g TiO 2 / g γ-Al 2 O 3) on the surface of γ-Al 2 O 3, with single or sub-monodispersed TiO 2 below the threshold, crystalline phase above the threshold and no bulk The breakthrough curves of TiCl 4 and the purge curve were measured, which provided the basis for the selection of the technological conditions for the preparation of TiO 2 / γ-Al 2 O 3 composite support by gas-phase flow adsorption.