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随着半导体器件的集成度由超大规模向甚大规模发展 ,器件尺寸也相应地由亚微米缩小到深亚微米。器件各单元的接触、互连性已成为影响ＶＬＳＩ与ＵＬＳＩ性能的重要因素之一。铝引线因铝硅低共熔点温度仅为 5 77℃ ,再加上铝硅接触处钉子缺陷、硅沉淀可分别引起漏电和高接触电阻
As the level of integration of semiconductor devices grows from very large scale to very large scale, the size of the device is correspondingly reduced from submicron to deep submicron. The contact and interconnection of each unit of the device have become one of the important factors that affect the performance of VLSI and ULSI. Aluminum lead due to the eutectic temperature of Al-Si is only 577 ℃, coupled with the contact of aluminum-silicon nail defects, silicon precipitation can cause leakage and high contact resistance