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采用基于Bi2Sr2CaCu2O8+x(BSCCO)单晶的双面工艺制备本征Josephson(约瑟夫森)结.通过单晶解理和双面氩离子刻蚀的方法,成功制备出单晶厚度小于200nm,一致性良好的本征结器件.采用准光学系统,研究了本征结在毫米波辐照下的响应.垂直于ab面方向磁场的作用使本征结在毫米波辐照下出现Shapiro(夏皮罗)台阶,而且各个结的约瑟夫森振荡是相位锁定的。
The intrinsic Josephson junction was prepared by a double-sided process based on Bi2Sr2CaCu2O8 + x (BSCCO) single crystal.The single crystal thickness less than 200nm was successfully prepared by single crystal cleavage and double-sided argon ion etching Good intrinsic junction device.The quasi-optical system was used to study the response of the intrinsic junction under the millimeter wave irradiation.The effect of the magnetic field perpendicular to the direction of the ab plane causes the intrinsic junction to appear under the millimeter wave radiation Shapiro ) Steps, and the Josephson oscillation of each knot is phase-locked.