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采用湿化学法在Si衬底上生长了纳米棒结构的Co掺杂ZnO薄膜,并研究了掺杂浓度对生成样品结构和性能的影响。研究表明这种湿化学法成本低廉、收益高、重复性良好。样品的XRD结果表明掺杂的ZnO没有出现杂相。SEM结果表明掺杂样品是由ZnO纳米棒团簇结构组成,且团簇的密度随着Co掺杂浓度的增大而增大。薄膜的光致发光光谱结果表明Co掺杂导致薄膜的带隙发生红移,同时也证明了Co原子有效地进入了ZnO晶格。
The wet-chemical method was used to grow a Co-doped ZnO thin film with a nanorod structure on a Si substrate. The effect of the doping concentration on the structure and properties of the samples was also studied. Research shows that this wet chemical method has the advantages of low cost, high yield and good repeatability. The XRD results of the samples show that the doped ZnO does not appear heterogeneous. SEM results show that the doped samples are composed of ZnO nanorod clusters, and the density of the clusters increases with the increase of the Co doping concentration. The photoluminescence spectra of the films indicate that Co doping results in a red shift of the bandgap of the films and also confirms that the Co atoms effectively enter the ZnO lattice.