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从理论上设计并研制了一种用于可重构光分插复用技术中的具有多波长处理功能的单片集成光探测器阵列,器件在GaAs基衬底上集成了GaAs/AlGaAs材料的法布里-珀罗谐振腔和InP-In_(0.53)Ga_(0.47)As-InP材料的PIN光探测器。为了能够实现对多路波长的探测,首先利用湿法腐蚀,改变不同区域谐振腔的厚度,然后通过二次外延完成谐振腔的生长,最后利用低温缓冲层技术在GaAs材料上异质外延高质量的InP基的PIN结构。器件的工作波长位于1500 nm左右。可实现对4路波长,间隔为10 nm的光信号探测,光谱响应线宽低于0.8 nm,峰值量子效率达到12%以上,响应速率达到8.2 GHz。实验测试结果与理论分析进行了对比,并得到了很好的解释。
A monolithic integrated photodetector array with multi-wavelength processing function is designed and developed in theory for reconfigurable optical add-drop multiplexing. The GaAs / AlGaAs material is integrated on GaAs substrate Fabry-Perot resonators, and PIN photodetectors for InP-In_ (0.53) Ga_ (0.47) As-InP materials. In order to achieve the detection of multi-wavelength, wet etching is firstly used to change the thickness of the resonant cavity in different regions and then to complete the resonant cavity growth by second-order epitaxy. Finally, the low-temperature buffer layer is used to heteroepitaxy GaAs material with high quality The InP-based PIN structure. The operating wavelength of the device is about 1500 nm. It can detect optical signals with 4 wavelengths and 10 nm intervals. The spectral response bandwidth is less than 0.8 nm, the peak quantum efficiency is more than 12%, and the response rate is 8.2 GHz. Experimental test results and theoretical analysis were compared, and get a good explanation.