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利用半导体压阻效应的压力传感器,由于信息处理技术的进步,正面向高精度、高灵敏、高可靠、低成本发展。其主流是用单晶硅制造的扩散型压力传感器。但最近,使用不同的材料作衬底,通过SiO_2等做绝缘,在其上沉积多晶硅薄膜的SOI结构的压力传感器由于可望制低成本耐高温及抗腐蚀性强的压力传感器
Pressure sensor using the piezoresistive effect of semiconductor, due to advances in information processing technology, is facing the development of high-precision, high sensitivity, high reliability and low cost. The mainstream is the proliferation of pressure sensors made of single crystal silicon. Recently, however, pressure sensors using different materials as a substrate and SOI structure having a polycrystalline silicon thin film deposited thereon by insulation such as SiO 2 are expected to be able to produce low-cost high-temperature and corrosion-resistant pressure sensors