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利用脉冲激光沉积(PLD)技术,在MgO衬底上外延生长YBa2Cu3O7-δ/Ba0.05Sr0.95TiO3薄膜.使用光刻和离子束刻蚀技术,将顶电极制作成插指状,构成BST平面插指电容,研究Ba0.05Sr0.95TiO3薄膜在微波频率下的电调谐性能.测试结果表明:在76K,外加直流偏压从0V变到160V,Ba0.05Sr0.95TiO3薄膜的相对介电常数从1160降低到252(可调率约为78%),变容器的损耗角从0.02降到0.009.该YBa2Cu3O7-δ/Ba0.05Sr0.95TiO3异质结薄膜介电可调率高,损耗正切小,与国际最好水平相当.
The YBa2Cu3O7-δ / Ba0.05Sr0.95TiO3 thin films were epitaxially grown on the MgO substrate by pulsed laser deposition (PLD) technique.The lithographic and ion beam etching techniques were used to fabricate the top electrode into interdigital Refers to the capacitance of the Ba0.05Sr0.95TiO3 film at the microwave frequency tuning performance test results show that: at 76K, the applied DC bias voltage from 0V to 160V, Ba0.05Sr0.95TiO3 film relative dielectric constant decreased from 1160 To 252 (adjustable rate of about 78%), the varactor loss angle decreased from 0.02 to 0.009. The YBa2Cu3O7-δ / Ba0.05Sr0.95TiO3 heterojunction dielectric adjustable dielectric loss tangent is small, with the international The best level of considerable.